| 摘要 |
PURPOSE:To improve the storing efficiency of electric charge for the subject semiconductor memory storage by a method wherein a recoupling center region is formed at the lower part of the channel section of the memory cell performing the writing-in of informations by storing electric charge on a floating semiconductor substrate using charging pumping. CONSTITUTION:A p<-> type single crystal silicon semiconductor substrate layer 4S, an n<+> type source region 9S, an n<+> type drain region 9D, a gate insulation film 7 and a polycrystalline silicon gate electrode 8 are formed, and in addition, a recoupling center region 6 is formed by injecting a life time killer such as gold, zinc, manganese, iron or the like to the lower part of the channel section in the semiconductor layer which is electrically floating. As a result, the carrier injected into the semiconductor layer 4S is recoupled on the region 6 and the semiconductor layer 4S is deviated to the positive or the negative direction. |
