Process for producing semiconductor devices, devices produced by the process, and circuits and articles including such devices.

摘要

A process for producing a semiconductor device comprises the steps of forming a silicon oxynitride layer (32) on a semiconductor substrate (31) by a plasma chemical vapor deposition method, removing the silicon oxynitride layer in patternwise manner to expose a portion of the substrate, and oxidising the exposed portion to form an oxide layer (34) thereon and produce the desired device. Preferably the silicon oxynitride layer remaining on the substrate is subsequently removed.