| 摘要 |
PURPOSE:To increase the reliability of the subject semiconductor device by a method wherein a source and drain is formed by performing an ion injection after the high-melting-point metal and an ion-injected mask are heat-treated in the inert gas of a high temperature in the manufacture of a high-melting-point metal gate MOS IC. CONSTITUTION:On the P type silicon substrate 101, whereon a field oxidation film 102 and a gate oxidation film 103 have been formed, molybdenum 104 and a plasmatic silicon nitriding film 105 are coated and patterned into a gate electrode form, and then a heat treatment is performed in the nitrogen of 1,100 deg.C. Then a source and drain 106 is formed by an ion injection using the plasmatic silicon nitriding film 105 as a mask. And after removing the nitriding film 105, the phosphor-doped silicon oxidation film is coated using the vapor-phase growing method, a heat treatment is performed in nitrogen at a temperature below the above heat treatment, an aperture 106A is bored on the silicon oxidation film on the source and drain, aluminum is evaporated and an electrode wiring 108 is formed. |
