| 摘要 |
PURPOSE:To improve both the detecting sensitivity of ion microanalysis and the rate of sputter etching, by using gaseous argon admixed with a suitable quantity of gaseous oxygen. CONSTITUTION:Gaseous argon admixed with 3-20vol% oxygen is used as the gas for generating ions. Using of said gas makes it possible to perform analysis with equal detection sensitivity to that when pure gaseous oxygen is used and with equal rate of sputter etching to that when pure gaseous argon is used. Using of said gas allows in addition to reduce the oxidation and consumption of cathode placed in the chamber where ions are generated, hence the durable time of the electric discharge is equal to that when pure gaseous argon is used. |
