发明名称 |
Resists and method of manufacturing semiconductor elements by using the same |
摘要 |
A resist utilized to prepare semiconductor elements or the like comprises a copolymer of, for example, 2,3 dibromo-n-propyl methacrylate and methylmethacrylate. The resist is applied onto a substrate to form a copolymer resist layer, the copolymer resist layer is irradiated with ionizing radiations, the irradiated portions of the copolymer resist layer are dissolved to form a positive pattern, the positive pattern is heated in inert atmosphere to cause crosslinking reaction of reactive radicals remaining in the copolymer resist, and then the assembly is etched with a liquid etchant to form an etched pattern on the substrate. Alternatively, the positive pattern and the underlying substrate are treated with plasma or ions to cause a crosslinking reaction of reactive radicals remaining in the copolymer resist to simultaneously etch portions of the substrate not covered by the positive pattern.
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申请公布号 |
US4278754(A) |
申请公布日期 |
1981.07.14 |
申请号 |
US19790058814 |
申请日期 |
1979.07.17 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
YAMASHITA, YOSHIO;KUNISHI, MITSUMASA;KAWAZU, RYUJI |
分类号 |
G03F7/004;G03F7/039;G03F7/40;(IPC1-7):G03C5/00 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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