| 摘要 |
A novel process is described for forming a gate member for an SOS device wherein the objectionable point that appears at the top of the silicon island is removed. The point results when an anisotropic etch is utilized to form the island. The process includes first forming a relatively thick layer of CVD oxide around sides at the base portion of the island while the remainder of the sides of the island, including the objectionable point, remain exposed for further processing in order to remove the point. The point is then heavily oxidized to form a bird beak which bird beak joins the gate oxide with the CVD oxide to produce a rounded edge.
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