发明名称 Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering
摘要 A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.
申请公布号 US4278890(A) 申请公布日期 1981.07.14
申请号 US19770812936 申请日期 1977.07.01
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 GRUEN, DIETER M.;KRAUSS, ALAN R.;SISKIND, BARRY
分类号 H01J37/317;(IPC1-7):G21K5/04;C23C15/00 主分类号 H01J37/317
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