发明名称 |
Method and means of directing an ion beam onto an insulating surface for ion implantation or sputtering |
摘要 |
A beam of ions is directed under control onto an insulating surface by supplying simultaneously a stream of electrons directed at the same surface in a quantity sufficient to neutralize the overall electric charge of the ion beam and result in a net zero current flow to the insulating surface. The ion beam is adapted particularly both to the implantation of ions in a uniform areal disposition over the insulating surface and to the sputtering of atoms or molecules of the insulator onto a substrate.
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申请公布号 |
US4278890(A) |
申请公布日期 |
1981.07.14 |
申请号 |
US19770812936 |
申请日期 |
1977.07.01 |
申请人 |
THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY |
发明人 |
GRUEN, DIETER M.;KRAUSS, ALAN R.;SISKIND, BARRY |
分类号 |
H01J37/317;(IPC1-7):G21K5/04;C23C15/00 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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