| 摘要 |
PURPOSE:To obtain a semiconductor memory device having less power consumption and no erroneous operation by providing no current path at all at the transistors of a memory cell except the connections to selected read data line. CONSTITUTION:Writing word lines W1-W3, reading word lines R1-R3 and read data lines X1-X3 are provided at a semiconductor memory device. In this configuration an MOS transistor Q11 is connected between the word line W1 and R1, data line X1, a transistor Q12 is connected between the word line X1 and the data line X2, and a transistor Q13 is connected between the word line W1 and the data line X3. Transistors Q21-Q23 are also connected between the word line W2 and R2, data lines X1-X3, and transistors Q31-Q33 are respectively connectd similarly between the word line W3 and R3, data lines X1-X3. Thus, the data lines X1-X3 are independently connected, thereby eliminating the wasteful current paths, and there can be provided a memory capable of controlling with quaternary logic levels. |
