| 摘要 |
PURPOSE:To obtain isotropic laser beam from a semiconductor laser by exciting selectively a minimum order lateral mode having a light gain at the center of an optical waveguide at both x- and y-directions and peak optical energy, operating thereby an oscillation threshold value with low current and controlling the lateral mode. CONSTITUTION:Layers 8, 9, 10 are distributed in an internal region along z-direction of a gap confronting between layers 7 and 11 represented by AlxGa1-xAs sequentially laminated on an N type GaAs substrate 1. The layer 8 forms the first region, the layer 9 forms a nucleus region, the layer 10 forms the second region, the gap confronting between the layers 7 and 11 in the range of the three laminated layer region side is filled with Al0.15Ga0.35As high resistance layers 121, 122. Then, minimum order lateral mode having a light gain at the center of the optical waveguide in both x- and y-directions and peak optical energy is selectively excited. Thus, oscillation threshold value can be operated with low current, the lateral mode can be controlled, and isotropic laser beam can be obtained. |
