| 摘要 |
PURPOSE:To eliminate variations in the characteristics of a Schottky barrier diode element even in high temperature sealing by laminating a titanium layer, a palladium layer and a silver layer as laminated layer electrode interposed between an insulating layer and an exposed semiconductor layer when mounting a bump electrode on the semiconductor layer upon opening of a window at the insulating layer. CONSTITUTION:A P type layer 14 is epitaxially grown on a P<+> type Si substrate 15, an insulating layer 17 is covered thereon, a window is opened thereat, and an overhang structure electrode 16 is formed while covering the periphery of the window. At this time overhand structure is first formed, a titanium layer 18 having preferable adherence to the insulating layer 17 is covered thereon, and a palladium layer 19 and a silver layer 20 are sequentially laminated thereon. Thus, the layer 19 becoming adhesive unit is interposed between the layers 18 and 20 having worse adherence to one another, and the diffusion of the silver to the layer 18 and the Si layer 14 can be prevented. Thereafter, a hemispherical bump electrode 21 is formed on the layer 20, and an electrode 24 formed of a gold layer 22 and a silver layer 23 is covered on the back surface of the substrate 15. Thus, a Schottky barrier characteristic can be obtained as designed values. |
