| 摘要 |
PURPOSE:To obtain a semiconductor having preferable characteristics by doping impurity in high density in a semiconductor layer at the portion to be mounted with aluminum electrode when mounting the electrode on the semiconductor layer, thereby preventing the deposition of silicon in aluminum. CONSTITUTION:An oxide film 7 is coated on an N type epitaxial layer 3 being a collector having an N type collector contact region 5 and a P type base region 6, and windows for forming base, emitter and collector terminals are opened thereat. Then, a polycrystalline Si layer 8 and a PSG film 9 are laminated on the entire surface and are grown thereon, the film 9 on the base terminal is removed, it is heat treated, P in the film 9 is diffused thereby, an N type emitter region 10 is formed in the N type emitter region 10, and an N<+> type region 11 is formed also in the region 5. Thereafter, the film 9 is removed, the base terminal is covered with the resist film 12, P ions are implanted to the whole surface, the layer 8 is converted into high impurity density layer 8', the layer 8 is retained only on the regions 10 and 11, and aluminum electrodes for the emitter and the collector are mounted thereon. |
