| 摘要 |
PURPOSE:To reduce the parasitic capacity of and the integrity of a semiconductor device by forming an insulating film formed between the source and drain regions and wiring layers disposed thereon in a thick insulating layer when forming an MOSFET. CONSTITUTION:A thin Si3N4 gate layer 12 is formed on the MOSFET forming region of a p type Si substrate 11, with the layer 12 as a mask it is heat treated, a thick field SiO2 layer 13 is thus formed on the periphery of a substrate 11, the layer 11 is selectively etched, is retained only at the center of the substrate, and windows 14, 15 are opened at both sides thereof. Subsequently, n type source and drain regions 16 and 17 are diffused through the windows in the substrate 11, a thick SiO2 layer 18 is simultaneously formed by a self-alignment, and a gate electrode 19 formed of low resistance polycrystalline Si is covered thereon through the thin gate layer 12 disposed therebetween over the end of the layer 18. Thereafter, the whole surface is covered with an SiO2 layer 20, a window is opened, and a wiring layer 22 is covered in contact with the electrode 19, and the end thereof is simultaneously confronted with the film 18 on the region 17. |
