| 摘要 |
PURPOSE:To obtain a semiconductor device having preferable thermal strain resistance and preferable thermal conductivity by empolying aluminum as junction metal. CONSTITUTION:An aluminum layer 2 is covered on the back surface of a semiconductor element 1, and an aluminum layer 8 is covered on te upper surface of the tab 4' of a lead frame 4. An aluminum layer 8' is attached also to the linear junction. The lead frame is thermally brought into pressure contact with a ceramic base 6 coated with low melting point glass 5, the element 1 is brought thermally into pressure contact with the tab 4', and they are bonded with the aluminum layers 2 and 3. Predetermined wires are attached to the element, and the element is sealed with the glass 8 coated on the lower surface of the ceramic cover 7. Since the aluminum junction 10 thus obtained exhibits the properties of the aluminum, it has excellent thermal conductivity, the strain due to the difference of the thermal expansion coeficients between the element 1 and the tab 4' can be absorbed by plastic deformation thereof, and also has strong repetition fatigue and improved reliability. |
