| 摘要 |
PURPOSE:To reduce the contacting resistance of an electrode wiring structure by forming a heat resistant wire of double layer structure of Cr-Ag through an aluminum-doped layer on an Si substrate. CONSTITUTION:An SiO2 film is formed on an Si substrate 17 on which an N<+> layer and an N<-> layer are laminated and a diffused layer is formed as prescribed, is selectively opened with windows, and an aluminum layer 25 is covered thereon. After it is heated at 450 deg.C for approx. 30 minutes, the layer 25 is etched and removed. With this treatment an aluminum-doped layer 26 is formed on the aluminum layer portion making direct contact with the Si substrate. Subsequently, two-layer electrode wires of Cr layer 27 and Ag layer 28 is selectively formed thereon. Thereafter, it is covered with an insulating protective film 29, and a bump electrode 30 and two-layer electrode of Au layer 31 and Ag layer 32 are attached thereto. According to this configuration an electric wire having durability against a sealing temperature of approx. 700 deg.C, a contact resistance not increased, and electric characteristics as designed values can be formed. |
