| 摘要 |
PURPOSE:To subject the surface of a material to a comparatively lowtemperature nitriding treatment in which a material is immersed in a plasma activated by exciting or ionizing a nitride gas by means of an inductive energy. CONSTITUTION:A nitride gas, e.g., N2 NH3, etc., is activated or ionized by an inductive energy under reduced pressure to form an activated plasmatic atmosphere, where a high frequency energy of 1-500MHz or a micro wave energy of 1-4GHz is used as an inductive energy. Then, in the atmosphere, the surface of a material previously heated to 100-800 deg.C, particularly 300-700 deg.C, is nitrided. The material to be nitrided includes semiconductors of Si or Si with N, O, C, etc. In the case of Si substrate as a material to be nitrided, the thickness of nitride or silicone nitride should be 5-200Angstrom . |
