| 摘要 |
<p>Disclosed is a photoelectric device used in the storage mode, particularly a photosensitive panel which can be employed as the photoconductive target in an image tube. It comprises a signal electrode (2) on a transparent substrate (1). An amorphous photoconductor layer (3) whose principal constituent is silicon and which contains hydrogen is disposed in adjacency to the signal electrode. To suppress dark current, a thin layer (8) is interposed between the signal electrode (2) and the amorphous photoconductor layer (3), the thin layer being made of an inorganic material whose principal constituent is at least one compound selected from oxides of εi, Ti, Al, Mg, Ba, Ta, Bi, V, Ni, Th, Fe, La. Be, Sc and Co, nitrides of Ga, Si, Mg, Te, Hf, Zr, Nb and B, and halides of Na, Mg, Li, Ba, Ca and K.</p> |
