| 摘要 |
PURPOSE:To obtain an MIS type element in a fine pattern by a method wherein when a source, drain and wiring layers respectively are formed on a semiconductor substrate, a polycrystal Si film not containing impurity is provided at first and those layers are formed by means of an impurity diffusion. CONSTITUTION:An SiO2 film 2 is cover-attached on a P type Si substrate 1, masks such as resist films 6 are provided on an element formed region 4 and a diffusion wiring formed region 5, and a P<-> type inversion preventive region 7 is diffusion- formed on the substrate 1 exposed between those regions 4, 5. Then, the masks are removed and a heat treatment is applied to make a thick field SiO2 film 8 be grown on the region 7, the polycrystal Si film 9 not containing the impurity be accumulated on the whole surface, and openings are formed on the region 4 and film 8 by selectively applying an etching. Then, the film 9 remained is covered with an SiO2 film 11 on the surface, and the polycrystal Si gate electrode 12 is fixed only in the opening 10 of the region 4 through the gate SiO2 film 11. In the following, an N type impurity is diffused to give conductivity to the film 9 and also to form the N<+> type source, drain regions 13, 14 and the wiring layer 15. |
