| 摘要 |
PURPOSE:To provide a superior surface protective film in a short period of time by a method wheren a polyimide resin is coated on a surface of a semiconductor element and heated under an inductive action in a pressure reduced atmosphere. CONSTITUTION:Air-tight container of a quartz glass pipe through which a microwave may be transduced is reduced in its pressure to less than 0.1 torr. The container is stored in an inductive heating furnace using a microwave of about 2.45 GHz. In the air-tight container is stored a semiconductor device coated with mixture of anhydrous pyromellitic acid diluted with dimethylacete aldehyde and aromatic diamine, and a protective film is formed by an inductive heating. With this arrangement, it is possible to form a protective film of about 20mum only with one film layer, a close fitting force is excellent and both a processing step and a processing time may also be excessively reduced. |
