| 发明名称 |
Control of the hydrogen bonding in reactively sputtered amorphous silicon. |
| 摘要 |
<p>A reactively sputtered photoconductive amorphous silicon film having a controlled monohydride and polyhydride bond density is produced by applying a voltage bias to the film's substrate (14) during reactively sputtering a layer of amorphous silicon in a partial pressure of hydrogen.</p> |
| 申请公布号 |
EP0031731(A2) |
申请公布日期 |
1981.07.08 |
| 申请号 |
EP19800304755 |
申请日期 |
1980.12.30 |
| 申请人 |
EXXON RESEARCH AND ENGINEERING COMPANY |
发明人 |
MOUSTAKAS, THEODORE DEMETRI |
| 分类号 |
C01B33/04;C23C14/00;C23C14/14;H01L21/205;H01L31/20;(IPC1-7):01B33/02;23C15/00;01L31/18 |
主分类号 |
C01B33/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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