| 摘要 |
PURPOSE:To cut an inversion layer mechanically and prevent surface breakdown, and lower leakage currents and stabilize characteristics by forming grooves surrounding a P-N junction. CONSTITUTION:Anode electrodes 31 and a cathode electrode 32 are made up while grooves 33, which surrounds the second diffusion layer 25 and depth thereof is sufficiently deeper than an inversion layer 27, are built up between P<+> type diffusion layers 24, the first impurity diffusion layers, and the N<+> type diffusion layer 25, the second impurity diffusion layer. Thus, the inversion layer 25 is completely cut around a P-N junction, and leakage currents are remarkably decreased. |
