| 摘要 |
PURPOSE:To obtain high P-N junction breakdown voltage and filed transistor threshold value voltage by a method wherein P-N junction breakdown voltage and field transistor threshold value voltage are each decided by the introduction of impurites with the same conduction types as separate semiconductor substrates. CONSTITUTION:P-N junction breakdown voltage is decided by the concentration of impurities with the same conduction type as a silicon substrate 1 of a high concentration region 5 contacting with a diffusion layer 7 of impurities with a conduction type opposite to the silicon substrate 1. The threshold value voltage of a field transistor is approximately decided by the concentration of impurities with the same conduction type as the silicon substrate 1 of an impurity injecting region 11. Thus, P-N junction breakdown voltage and field transistor threshold value voltage are each decided by the ion injection of impurities with the same conduction types as separate silicon substrates 1. |
