TRANSISTOR CIRCUIT DEVICE

摘要

PURPOSE:To shorten the length of a channel region of a junction type transistor and miniaturize a device by forming the channel region into a semiconductor region as a source region of an insulating gate filed-effect transistor. CONSTITUTION:An insulating gate type field-effect transistor Q1 is formed in such a manner that semiconductor regions 33 ,34 are used as a drain region and a source region respectively, and a region 49 between the semiconductor regions 33 and 34 of a semiconductor substrate 31 is used as a region for forming a channel, a conductive layer 39 as an electrode for a gate and an insulating layer 38 as an insulating layer for a gate. A channel region 50 of a junction type transistor Q2 is made up into the semiconductor region 34 as the source region of the insulating gate type field-effect transistor Q1.