| 摘要 |
PURPOSE:To divide a region forming an MOSFET on an inclined plane in one groove and a region not forming it and increase the degree of freedom by partially changing the thickness of an insulating film made up on the inclined plane of one groove, in VMOS structure (a channel region is built up on a flank of the V-shaped groove formed on a surface of a substrate). CONSTITUTION:A transistor is formed in such a manner that an arbitrary section of an inclined plane is selected by selectively changing the thickness of an insulating film 9 under one continuous gate electrode 5 according to regions in the inclined plane in one groove. Thus, the transistor with channel width having the large degree of freedom to one groove can be made up, and a circuit can further be integrated by forming a plurality of elements. |
