发明名称 INSPECTION OF AIRTIGHTNESS OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To measure surely and easily the airtightness of the semiconductor device by a method wherein after the airtight vessel accommodating a semiconductor element and being the space part filled with a liquid is held in an atmosphere of a mixed gas consisting of a radioactive isotropic element gas and an inert gas, the measurement of radiation is performed. CONSTITUTION:When the airtightness of the semiconductor device being used in a place having a high outside pressure like the deep sea is to be inspected, the semiconductor element 1 having conductors 2, 3 is sealed airtightly with insulating cylinders 4 through the liquid 8. After the semiconductor device is held in a high vacuum tank, the mixed gas consisting of the radioactive isotropic element gas like krypton 83, etc., and the inert gas like N2, etc., are itroduced into the tank, and then the device is taken out and the radiation is measured to inspect and judge the airtightness. By this way, the sure and highly reliable judgement can be performed.</p>
申请公布号 JPS5683049(A) 申请公布日期 1981.07.07
申请号 JP19790163144 申请日期 1979.12.11
申请人 MITSUBISHI ELECTRIC CORP 发明人 OOKATA MITSUO
分类号 H01L21/66;H01L23/051;H01L23/20 主分类号 H01L21/66
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