| 摘要 |
PURPOSE:To uniformalize both the volume of the plasma processing and the characteristics of the semiconductor device by a method wherein the feeding quantity of reaction gas from a gas feeder arranged facing to a semiconductor wafer is changed according to the position of a semiconductor thin plate. CONSTITUTION:Using the plasma processing device of paralleled-flat-plate type structure wherein the substrate supporting member 2 containing a heating apparatus and the gas feeder 3 are arranged facing each other in a vacuum deaeratable container 1, the feeding quantity of gas is changed by varying the interval between the gas feeding small holes 5', provided facing to the semiconductor wafer 4 and the plasma processing is performed. Hence, the volume of the plasma processing is uniformalized, the variation of the thickness of the deposited thin film and the quantity of etching are eliminated, the characteristics of the semiconductor are uniformalized and the yield rate can be improved as well. |
