发明名称 Piggyback readout stratified channel CCD
摘要 A piggyback readout stratified channel CCD includes, in a semiconductor substrate, a charge transfer channel, a barrier region lying under and adjacent to the charge transfer channel, and a charge integration channel lying under and adjacent to the barrier region. The semiconductor substrate and barrier region have dopant atoms of a first type; while the charge transfer channel and charge integration channel have dopant atoms of a second type opposite to the first type. An insulating layer overlies the charge transfer channel; and a plurality of phase electrodes are serially disposed thereon. In operation, charge transfers from the charge integration channel to the charge transfer channel, and charge packets propagate simultaneously along both the charge transfer channel and the charge integration channel in a piggyback fashion.
申请公布号 US4277792(A) 申请公布日期 1981.07.07
申请号 US19780869735 申请日期 1978.02.17
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 HORNBECK, LARRY J.
分类号 H01L27/148;H01L29/10;H01L29/768;(IPC1-7):H01L29/78;G11C19/28;H01L27/14;H01L31/00 主分类号 H01L27/148
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