GLASS PASSIVATION OF MESA TYPE SEMICONDUCTOR DEVICE

摘要

PURPOSE:To prevent the generation of crack in the passivation glass and to prevent the deterioration of electric characteristic of a mesa type semiconductor device by a method wherein a groove being provided in the semiconductor substrate is buried with glass of accumulation quantity having a specified relation with the volume of the groove and is burned. CONSTITUTION:When the groove 6 is to be provided in the semiconductor substrate and is to be passivated with glass, the accumulation quantity of glass V1 is made to be less than V2/k (V2 indicates the volume of the groove 6, k indicates the changing ratio of volume by burning) and is accumulated and is burned to form the glass passivation film 7. By this way, the surface of the glass is made to be concave, crack withstanding intensity is improved, the deterioration of electric characteristic is prevented and the yield of manufacture can be elevated.