| 摘要 |
A layer of silicon having fine particles of silicon carbide and carbon between the silicon crystallites is deposited on a support of aluminium oxide, porcelain, quartz, molybdenum, tantalum silicon or silicon carbide by decomposition of the gaseous phase. The reaction gas which flows over the heated substrate may be a mixture of hydrogen or an inert gas with CH3SiHCl2 or with SiHCl3 and CH2Cl2, SiCl4 and CHCl3 or SiBr4 and CHBr3. The decomposition temperature is maintained between 1000 DEG and 1300 DEG C. It is stated that these temperatures are limits below and above which pure silicon and silicon carbide are formed, respectively. Doping substances may be added by using e.g. PCl3.ALSO:A layer of silicon having fine particles of silicon carbide and carbon between the silicon crystallites is deposited on a support silicon or silicon carbide by decomposition of the gaseous phase. The reaction gas which flows over the heated substrate may be a mixture of hydrogen or an inert gas with CH3SiHCl2 or with SiHCl3 and CH2Cl2, SiCl4 and CHCl3 or SiBr4 and CHBr3. The decomposition temperature is maintained between 1000 DEG and 1300 DEG C. It is stated that these temperatures are limits below and above which pure silicon and silicon carbide are formed respectively. Doping substances may be added by using, e.g. PCl3. |
