| 摘要 |
PURPOSE:To obtain ohmic contact between an N type semiconductor layer and a P type semiconductor layer formed adjoining to the layer by connecting both layers through a eutectic crystal layer with metal forming a eutectic crystal with the semiconductor. CONSTITUTION:A drain (P<+> diffusion layer) D1 of a P channel MOSFET1 and a drain (N<+> diffusion layer) D2 of an N channel MOSFET2 are made up in an adjacent shape by means of oxidation, diffusion and etching processes. Metal forming a eutectic crystal with silicon such as Al is built up in only by thickness sufficient for forming the eutectic crystal such as 1,000Angstrom . Al of an unnecessary section is removed by using a normal optical etching process, leaving only an Al film of a junction section between the P<+> diffusion layer and the N<+> diffusion layer. Heat treatment sufficient for forming a eutectic crystal layer 10 is executed. Thus, the P<+> diffusion layer D1 and the N<+> diffusion layer D2 made up ohmic contact. |
