| 摘要 |
PURPOSE:To obtain a highly precise and reliable wiring for the subject semiconductor IC by a method wherein a metal silicide is evaporated and lifted off using the mask having an inverted tapering section. CONSTITUTION:An aparture is provided on the SiO2 8 and Si3N4 9 on an elementformed subdtrate, and a PSG11 and CVD-SiO2 12 films are laminated. When the films 11 and 12 are etched by providing a resist mask 13, an inverted tapered type pattern 14 is selectively formed utilizing the difference of etching speed. The resist mask is removed and an MoSi2 151 and 152 films are deposited. After that, when the pattern 14 is removed by etching using NH4F, electrodes 16-18 are completed. As the metal silicide having an excellent etchingproof and heatproof property is used for the electrode material, there exists no partial removal and change in quality of the electrode wiring when the inverted tapering pattern 14 is removed by etching, and the rising of the wiring caused by heat treatment is prevented and a highly precise and reliable wiring can be obtained. |
