| 摘要 |
PURPOSE:To obtain the highly reliable microscopic wiring by a method wherein the wiring made of the alloy having the principal ingredient of Al containing Cu is covered by the intermediate layer which does not contain SiO2 and Cu, and an SiO2 insulating layer or the insulating layer having the SiO2 as the principal ingredient is superposed on said intermediate layer. CONSTITUTION:A wiring layer 22 is formed by evaporating about 1mum of Al-Cu alloy containing 3.5wt% of Cu on the Si substrate 21. Then the Si substrate is soaked in a nitric acid aqueous solution of 64wt% and the Cu on its surface is eluted and an intermediate layer 24 that contains no Cu is formed. The intermediate layer is a thin film of Al and its thickness is about 20-300mum. Ti, W, Mo, Al-Si alloy, Al2O3 and Si3N4 may be used as an intermediate layer besides Al. Then PSG23, containing 4.5mol% of P2O5, is laminated about 700mum using a CVD method. In this constitution, the direct contact of the Al alloy wiring with the SiO2 or the PSG layer is completely prevented except at the lower surface of the wiring layer and no defect is generated on said contact surface at the temperature of 350-450 deg.C. |
