| 摘要 |
PURPOSE:To increase the effect of a gettering treatment of a heavy metal in a semiconductor device by a method wherein the distance between the circumference of an element forming region being desired to perform gettering treatment and a lattice defect part is shortened. CONSTITUTION:When a rated voltage is applied on an element part or a diffusion wiring formed on an Si substrate, O or Ar ions are selectively implanted or an area where a high concentration of any one of C, Si, B, P, and As is added to is provided at a place where it is separated to a point the depletion layer extending from said Si substrate does not reach. By this constitution, the heavy metal molecules existing in the substrate are taken in gradually into the defect frequently occuring region through the heat treatment process, and even if the Si substrate is made to have a large caliber, a warp is not generated and the gettering treatment of the heavy metal can be performed in a short time. |
