| 摘要 |
<p>Power semiconductor device operating at high voltage and a high rate of commutation is described formed on a crystal, the free surface of which carries the command electrode and a first access electrode to the semiconductor, the second access electrode being formed in the substrate of the crystal. The two surface electrodes occupy the whole of the free surface of the crystal, each having the shape of a comb the points of the combs being interspersed and all having the same dimensions. The gaps sepg. the points from each other and the edge of the crystal are more or less regular and uniform. The surfaces at which electric contact is made are formed in a different pattern. These surfaces being supported by an insulating layer and joined to the electrodes with a thick metallisation layer. The design strikes a compromise between the need for the largest possible area for the emitter and base and the need to minimise the variations in the voltage VB existing between one access electrode (emitter) and the command electrode, the base, when the semiconductor is in a satd. state.</p> |
