| 摘要 |
PURPOSE:To obtain a signal level that corresponds to fluctuations of a power source voltage by providing an MIS (metal insulator semiconductor) diode of a low-threshold voltage for drawing out the electric charge of the output of an input circuit between the gate and source of load side MISFET. CONSTITUTION:The input circuit consists of load side MISFETQ1 and drive side MISFETQ2. A load circuit consists of load side MISFETQ3 and drive side MISFET Q4 receiving the output of the input circuit. To draw out the remainder of charge of node N, i.e. the output of the input circuit generated owing to fluctuations of power source voltage VDD, MIS diode Q5 of a low-threshold voltage is provided between the gate and source of load MISFETQ1. |
