| 摘要 |
PURPOSE:To control the intensity of an afterimage by varying a voltage applied to a control electrode, controlling the injection of signal charge into an area where signal charge is trapped, by providing the area and control electrode in each photosensitive cell of a solid-state image pickup device. CONSTITUTION:On the surface of silicon p type substrate 6, buried-channel n layer 7 of CCD part 2 and n<+> layer 8 of photosensitive layer 1 are provided. On substrate 6, SiO2 film 9 is formed and on SiO2 film 9, transfer electrode 10 of polycrystal silicon, for example, of CCD part 2, electrode 11 of transfer gate part 3 and afterimage control electrode 12 are formed. Light incidence starts at the top of n<+> layer 8 of photosensitive part 1 and in n<+> layer 8 and adjacent Si substrate 6, signal charges 16-1-16-N are generated through the light incidence and then stored in depletion layer 17. In this case, applying a voltage, controlling an afterimage, to afterimage control electrode 12 makes it possible to reduce a flicker even in image pickup operation under the condition of fluorescent-lamp lighting. |
