| 摘要 |
PURPOSE:To obtain a monocrystal matched with a crystal plane orientation by forming a polycrystalline or amorphous semiconductor film on a monocrystalline semiconductor substrate formed a dielectric film to expose a part of the substrate surface wherein the semiconductor film is scanned by energy beams with linear cross section. CONSTITUTION:An SiO2 film 11 is selectively formed on a monocrystalline Si substrate 10 surface presenting a (111) crystal plane to expose a part of the substrate surface. A polycrystalline or amorphous Si film 12 is formed on the film 11 by a CVD method or the like so that the film 12 may contact with the exposed section of the substrate. Next, while heating the Si film 12 by irradiating the film 12 by light beams 13 having a linear cross section, and the film 12 is monocrystallized by scanning the beams in an arrow A direction and by heat treatment. In this way, the substrate surface and the crystal plane orientation are kept the same and monocrystallization is performed without variations. Furthermore, the number of crystal defects included in the monocrystalline film will be minimized. |
