| 摘要 |
PURPOSE:To permit the formation of a monocrystalline semiconductor film excluding crystal grain boundaries by scanning and heating a polycrystalline or amorphous semiconductor film provided on a dielectric by energy beams wherein ion implantation treatment is applied and heat treatment is further followed. CONSTITUTION:An SiO2 film 11 is provided on a monocrystalline Si10 surface and a polycrystalline or amorphous Si film 12 is provided on the film 11. Then, first of all, laser beams scan on the film 12 while irradiating and heating the film 12. And the film 12 is converted into a monocrystalline Si film 12A existing crystal grain boundaries GB. Next, the film 12A is converted into an amorphous Si film 12B by implanting Si ions 14. After removing the crystal grain boundaries GB left on the surface by etching, heat treatment is applied in inert gas atmosphere or the like for monocrystallization. In this way, a monocrystalline film practically excluding crystal grain boundaries will be obtained and the film having a few junction leakage current at the time of device formation and superior characteristics such as life time or the like will be obtained. |
