| 摘要 |
The invention relates to a lithographic resist composition for use in a method of forming a film (17) on a substrate (11) comprising the steps of providing a deposition mask (10) of the resist composition on the substrate (11), exposing a selected portion of the mask to ultra-violet rays, dissolving the exposed portion with aqueous alkali to form an aperture (15) with negative slope or overhang, depositing on said substrate (11) through the aperture (15) said film (17) and removing the deposition mask (10). The resist composition comprises a phenolic-aldehyde resin, a photosensitizer and Meldrum's diazo, or Meldrum's acid or suitable analogs thereof as a profile modifying agent. The profile modifying agents useful in the present invention have the formula: …<CHEM>… wherein R1 is C1 to C20 alkyl or aryl, R2 is H, C1 to C20 alkyl or aryl, or together R1 and R2 are cycloalkyl, A is N or H. |
