发明名称 FORMATION OF PATTERN
摘要 PURPOSE:To form a fine pattern with high accuracy and without causing the breakage of wire or the like by providing a layer preventing a resist from the reflection of light for exposure between a formed substance and the resist. CONSTITUTION:A formed substance 2 having high reflection characteristics such as Al or the like is provided on a substrate 1. And a coating layer 3 consisting of a substance (for example, poly Si or the like) having a small reflectivity or high light absorption is provided on the formed substance 2 surface when exposure is applied by masks 6 by using a photoresist 4. In this way, the irradiated light is absorbed in the layer 3 or multiply reflected. Therefore, regions 5 not to be exposed will not undesirably exposed and a fine pattern will be obtained with high accuracy.
申请公布号 JPS5680133(A) 申请公布日期 1981.07.01
申请号 JP19790158336 申请日期 1979.12.06
申请人 CHO LSI GIJUTSU KENKYU KUMIAI 发明人 ENDOU NOBUHIRO;KAMIMURA KAZUO
分类号 H01L21/027;H01L21/30;(IPC1-7):01L21/30 主分类号 H01L21/027
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