| 摘要 |
<p>Disclosed is a memory device having a plurality of memory cells (10) arranged in a matrix form; address buses (A) connected to the memory cells (10) and forming respective rows of the matrix; and data buses (B) connected to the memory cells (10) and forming respective columns of the matrix.</p><p>The address buses (A) or the data buses (B) are formed by paired bus lines (A,a or B,b), and bridge lines (5 or 4) are formed between one (A or B) and the other (a or b) of the paired bus lines (A,a or B,b).</p> |
