| 摘要 |
PURPOSE:To permit a charge-coupled memory device to be more highly densified and speeded up in its operation by forming its electrodes in three layers and using polycrystalline Si for the electrodes in the first and second layers and using a metal for the electrode in the third layer. CONSTITUTION:On a p<-> type Si substrate 11, a p type channel-cut region 12, a field insulating film 13 and a gate insulating film 14 are formed, and the first layer (storing) electrodes 151, 152... of polycrystalline Si are formed. On this, an SiO2 film 16 is grown to form the second layer (barrier) electrodes 171, 172... of polycrystalline Si. Moreover, through an SiO2 film 18, metal gate electrodes 191, 192... of Mo, W or Al are formed by evaporation or the like. Finally, an N<+> type impurity region 21 is formed by ion implantation or the like. Said constitution permits the charge-coupled memory device having electrodes of A three-layer structure to be more highly densified and speeded up in its operation. |
