| 摘要 |
PURPOSE:To obtain an electric-field type luminous semiconductor device which stably functions at low voltage by forming the first contact directly connected to an insulating GaN crystal layer and the other contact electrically connected to the crystal layer through a GaN crystal layer with specified high resistance. CONSTITUTION:An insulating GaN crystal layer 11 is grown on a sapphire substrate 14 through a GaN crystal layer 12, which is formed in undope and has high resistance, and the first contact 15 directly connected to the insulating crystal layer 11 and the other contact 16 electrically connected to the insulating crystal layer 11 through the high resistance crtstal layer 12 are made up. A conductive GaN crystal layer 13 is further made up at a location opposite to the insulating crystal layer 11, holding the high resistance crystal layer 12, and it is preferable that the density of the carriers of the high resistance crystal layer 12 is 10<15>-7X10<17>cm<-3>. Thus, when about 5V DC voltage is applied between the contacts 15, 16 through conductors 17, 18, an element which displays blue or green luminescence and stably functions can be obtained. |
