MANUFACTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE:To permit the application of uniform annealing treatment to a wafer surface region by making the focal line of energy beams linear wherein the beams are scanned on the wafer surface in belt shape. CONSTITUTION:A linear beam formation section 12 is composed of an optical system 16 consisting of a long-arc Xe lamp 14 radiating heating light as continuous waves and a concave reflector projecting sectional light beams making the linear focal line on the wafer surface by condensing the light from the lamp or the like. The sectional light beams are shuttled in an arrow A direction so that the beams may become wider belt shaped ones than the space between dashed lines (a) and (b). In this way, heat treatment will uniformly be applied to the circuit element formation region of a wafer 10 in belt shape by one scan of the linear beams. And the growth of a crystal defect and variations in the activation degree of an ion implantation layer will be eliminated.