| 摘要 |
PURPOSE:To obtain a light detector which is excellent in characteristics in the reverse direction, a particularly, a breakdown characteristic, at high reverse bias voltage and is superior in a low noise property at low dark currents by a method wherein specified layer structure is formed, and specified high resistance regions are made up around light receiving regions. CONSTITUTION:An N<+> type InP layer 12, an N type In0.79Ga0.21As0.47P0.53 layer 13, an N type InP layer 14 and a P<+> type InP layer 15 are grown on an N<+> type InP substrate 11, a thin-film 16 in SiO2, etc. is formed, and then the film 16 is selectively removed. Metal 17 for a P type electrode and metal 19 for an N type electrode are annularly formed, a gold film 18 is built up on the metal 17, and the SiO2 film 16 is removed using the gold film 18 as a mask. Portons are injected to these wafers using the gold film 18 as a mask, a high resistive region 15' of the P<+> type InP layer 15 and a high resistive region 14' of the N type InP layer 14 are formed, while said gold film is lastly removed leaving the region 18 covering the metal 17, and a light detector for not less than 1.1mum wavelengths is obtained. |
