发明名称 |
PHOSPHORUS-NITROGEN-OXYGEN FILM AND METHOD FOR MAKING SUCH FILM |
摘要 |
A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400 DEG -900 DEG C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate. |
申请公布号 |
GB1592022(A) |
申请公布日期 |
1981.07.01 |
申请号 |
GB19780003626 |
申请日期 |
1978.01.30 |
申请人 |
IBM CORP |
发明人 |
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分类号 |
H01L29/73;C23C16/30;H01L21/205;H01L21/225;H01L21/28;H01L21/311;H01L21/314;H01L21/318;H01L21/331;H01L21/8247;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):01J17/32 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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