发明名称 PHOSPHORUS-NITROGEN-OXYGEN FILM AND METHOD FOR MAKING SUCH FILM
摘要 A method is described which forms amorphous phosphorus-nitrogen-oxygen material having excellent thermal stability and low reactivity to a wide variety of chemicals. The material is manufactured using a chemical vapor deposition process. The reaction chamber is maintained at a temperature between about 400 DEG -900 DEG C. with a suitable substrate placed therein. Reaction gases containing phosphorus-nitrogen-bearing compounds and a source of oxygen are passed through the chamber to deposit the phosphorus-nitrogen-oxygen film onto the substrate.
申请公布号 GB1592022(A) 申请公布日期 1981.07.01
申请号 GB19780003626 申请日期 1978.01.30
申请人 IBM CORP 发明人
分类号 H01L29/73;C23C16/30;H01L21/205;H01L21/225;H01L21/28;H01L21/311;H01L21/314;H01L21/318;H01L21/331;H01L21/8247;H01L29/51;H01L29/788;H01L29/792;(IPC1-7):01J17/32 主分类号 H01L29/73
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