| 摘要 |
A programmable cell 52 for use in programmable electronic arrays 50 such as Prom devices, logic arrays, gate arrays and die interconnect arrays has a body 68 of phase changeable material with a highly non- conductive state settable and substantially non-resettable into a highly conductive state by applying a threshold voltage of 20 volts or less, a current of 25 milliamps or less, for 1000 microseconds or less. The body 68 is formed from chalcogenide elements, such as germanium tellurium and selenium or combination thereof, or from tetrahedral elements, such as silicon, germanium and carbon or combinations thereof. Each cell includes an isolating device such as a Schettky diode, a bipolar or MOS device or can be a thin film diode or transistor. <IMAGE>
|
