| 摘要 |
PURPOSE:To intend to increase the yield by setting the first layer which contacts with a substrate outside the luminous region to form a reverse bias junction and confining the luminous area within a very small region, thereby simplifying the step. CONSTITUTION:A p-GaAs 12 is set to open on an n<+>-GaAs 11 and n-Ga0.7Al0.3 As 13, p-GaAs 14, p-Ga0.7Al0.3As 15 and p-Ga0.9Al0.1As 16 are laminated thereon. As a result, the surface thereof becomes even. Then, a Zn is diffused on the layer 16 to form a thin p-layer 17 and further covered with SiO2 film 18 to attach electrodes 19 and 20 thereto. In this constitution, since the layer 12 is thin and fine holes can be formed with a photoetching method, the increase of the yield is remarkable. Further, since the p<+>-layer 17 is for ohm contact and may be a thin film, it is obtained in a very short time of diffusion. Furthermore, there occurs no deterioration of the crystal of the epitaxial layer and the life can be extended. |
