| 摘要 |
PURPOSE:To facilitate the forming of an ultra fine pattern by a method wherein Mo film is coated on a base layer when the ultra fine pattern electrode is formed on a semiconductor, antioxide film layer is made on the film in accordance with the pattern to be left, heat treated in an oxidation atmosphere to sublimate the Mo film in the exposed area. CONSTITUTION:Mo film layer 2 is coated on a surface of the base layer 1, anitoxide film 3 such as Al film, Si3N4 film SiO2 film etc. is arranged in accordance with the desired pattern, heat treated at a temperature higher than 400 deg.C in the atmosphere of O2 of which pressure is decreased or increased, and the Mo film 2 in the exposed area is changed to the film 4 such as MoO2, MoO3 etc. Similarly, the sublimation of the film 4 is used to sublimate the same to keep the Mo film 2 of ultra fine pattern only below the film 3. With this arrangement, regardless of the material quality of the base layer, a forming of the ultra fine pattern can be facilitated. |
