| 摘要 |
PURPOSE:To eliminate decrease in the pattern width with a lower etching speed of Al by etching Al with a polycrystalline Si layer interposed between an insulator film and an Al in such a manner as to be identical in type to the Al pattern when the pattern is made on a semiconductor substrate through the insulator film. CONSTITUTION:A semiconductor substrate 1 is coated with an insulator 4 on which a thin film 8 polycrystalline Si is accumulated. Then, a photoresist film 9 with a specified pattern is provided on the film 8. Then, with the film 9 as mask, the thin film undergoes a dry etching or a wet etching to make specified pattern. Thereafter, an Al thin film 11 is applied on the entire surface including the pattern 10 and a resist film 12 is provided thereon corresponding to the pattern 10 in such a manner as to be identical in type to the pattern. With this film 12 as mask, the thin film 11 on the film 4 exposed is etched away in such a manner that a wiring pattern comprising a polycrystalline Si layer 10 and an Al thin film 13 is left on the film 4. In this manner, the etching of Al is performed only on the film 4 at a low speed to obtain the wiring width true to the designed dimensions. |
