发明名称 |
SCR HAVING HIGH GATE SENSITIVITY AND HIGH DV/DT RATING |
摘要 |
<p>RD-7857 A thyristor is provided having high gate sensitivity in combination with high dv/dt ratings. An amplifying gate structure is utilized having a pilot thyristor region including a first portion characterized by a first extent and at least one projection of said first portion extending therefrom and having a lateral extent greater than the extent of said first portion; and means substantially isolating said pilot thyristor region from the remainder of the device which means surround said first portion and the slides of said projection.</p> |
申请公布号 |
CA1104266(A) |
申请公布日期 |
1981.06.30 |
申请号 |
CA19780303947 |
申请日期 |
1978.05.24 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
FERRO, ARMAND P.;TEMPLE, VICTOR A.K. |
分类号 |
H01L29/04;(IPC1-7):01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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